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1.发明授权P-n junction scanning device having photo-conductors disposed on device with field effect layers for controlling position of scanning spot 失效具有用于控制扫描点位置的场效应层的装置处理的导光体的P-N结扫描装置
公开(公告)号：US3558897A
公开(公告)日：1971-01-26
申请号：US3558897D
申请日：1969-01-27
Applicant: GEORGE A MAY
Inventor： MAY GEORGE A
CPC classification number: H01L33/0041 , H01L27/15 , H01L29/00 , H01L33/00
Abstract: An elongated light-emitting multilayer semiconductor device having a modified metal insulator-semiconductor field effect transistor substructure producing a spot of light controllably variable in intensity and position, and scanning devices including one or more of such devices in combination with lightresponsive elements.
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2.发明授权Solid-state voltage-scanned device including long narrow p-n junction material with photoconductors thereon 失效固态电压扫描装置包括其上具有光电导体的长的窄p-n结材料
公开(公告)号：US3388255A
公开(公告)日：1968-06-11
申请号：US37702164
申请日：1964-06-22
Applicant: GEORGE A. MAY
Inventor： MAY GEORGE A
IPC: G09F9/33 , H01L27/146 , H01L27/15 , H01L33/00
CPC classification number: H01L27/15 , G09F9/33 , H01L27/146 , H01L33/00
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