公开(公告)号：US20140134822A1

公开(公告)日：2014-05-15

申请号：US13678011

申请日：2012-11-15

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Gopal Srinivasan ,  Andy Wei ,  Dinesh Somasekhar ,  Ali Keshavarzi ,  Subi Kengeri

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785 ,  H01L29/78648

Abstract: A method for fabricating a FinFET integrated circuit includes depositing a first polysilicon layer at a first end of a diffusion region and a second polysilicon layer at a second end of the diffusion region; diffusing an n-type material into the diffusion region to form a diffused resistor; and epitaxially growing a silicon material between the first and second polysilicon layers to form fins structures over the diffused resistor and spanning between the first and second polysilicon layers.

Abstract translation: 一种制造FinFET集成电路的方法包括在扩散区的第二端处沉积第一多晶硅层，在扩散区的第二端沉积第二多晶硅层; 将n型材料扩散到扩散区域中以形成扩散电阻器; 并且在所述第一和第二多晶硅层之间外延生长硅材料，以在所述扩散电阻器上方形成翅片结构并跨越所述第一和第二多晶硅层。

公开(公告)号：US08962421B2

公开(公告)日：2015-02-24

申请号：US13678011

申请日：2012-11-15

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Gopal Srinivasan ,  Andy Wei ,  Dinesh Somasekhar ,  Ali Keshavarzi ,  Subi Kengeri

IPC: H01L21/8234 ,  H01L21/20 ,  H01L49/02 ,  H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8238

CPC classification number: H01L28/20 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785 ,  H01L29/78648

Abstract: A method for fabricating a FinFET integrated circuit includes depositing a first polysilicon layer at a first end of a diffusion region and a second polysilicon layer at a second end of the diffusion region; diffusing an n-type material into the diffusion region to form a diffused resistor; and epitaxially growing a silicon material between the first and second polysilicon layers to form fins structures over the diffused resistor and spanning between the first and second polysilicon layers.

Abstract translation: 一种制造FinFET集成电路的方法包括在扩散区的第二端处沉积第一多晶硅层，在扩散区的第二端沉积第二多晶硅层; 将n型材料扩散到扩散区域中以形成扩散电阻器; 并且在所述第一和第二多晶硅层之间外延生长硅材料，以在所述扩散电阻器上方形成翅片结构并跨越所述第一和第二多晶硅层。