公开(公告)号：US10224396B1

公开(公告)日：2019-03-05

申请号：US15817629

申请日：2017-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Steven M. Shank ,  Daisy Vaughn ,  Thai Doan

IPC: H01L29/00 ,  H01L29/06 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to deep trench isolation structures and methods of manufacture. The structure includes: at least one gate structure on a substrate; an interlevel dielectric material above the substrate; and a trench isolation structure extending into the substrate adjacent to the at least one gate structure and terminating in the interlevel dielectric material above the substrate.