公开(公告)号：US09431289B2

公开(公告)日：2016-08-30

申请号：US14741618

申请日：2015-06-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christopher V. Baiocco ,  Michael P. Chudzik ,  Deleep R. Nair ,  Jay M. Shah

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/762 ,  H01L29/0649 ,  H01L29/66537 ,  H01L29/783

Abstract: Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.