公开(公告)号：US10353288B2

公开(公告)日：2019-07-16

申请号：US15824293

申请日：2017-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vineet Sharma ,  Sohan S. Mehta ,  Craig D. Higgins ,  Sunil K. Singh ,  Feng Wang

IPC: G03B27/42 ,  G03F7/26 ,  G03F7/00 ,  G03F7/38

Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.

公开(公告)号：US20190163054A1

公开(公告)日：2019-05-30

申请号：US15824293

申请日：2017-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vineet Sharma ,  Sohan S. Mehta ,  Craig D. Higgins ,  Sunil K. Singh ,  Feng Wang

IPC: G03F7/00 ,  G03F7/38

CPC classification number: G03F7/0035 ,  G03F7/38

Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.

公开(公告)号：US10386715B2

公开(公告)日：2019-08-20

申请号：US15730830

申请日：2017-10-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Feng Wang ,  Hongxin Zhang ,  Shaowen Gao ,  Norman Chen

IPC: G03F1/36

Abstract: A method of creating an optical proximity correction (OPC) model and assessing the model through optical rule checking (ORC) includes the introduction of post-integration, i.e., post-metallization data. High density critical dimension scanning electron microscopy and backscattered electron scanning electron microscopy from a metallized structure are used during development and verification of the model to accurately predict post-integration behavior.