公开(公告)号：US20200004155A1

公开(公告)日：2020-01-02

申请号：US16022752

申请日：2018-06-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yong Liang ,  Lei Sun ,  Yongan Xu ,  Craig D. Higgins

IPC: G03F7/20 ,  G03F1/22

Abstract: Disclosed are embodiments of a multi-layer stack and photolithography methods and systems that employ such a stack. The disclosed multi-layer stacks include a photoresist layer on an underlayer. The photoresist layer and underlayer are made of different materials, which are selected so that valence and conduction band offsets between the underlayer and photoresist layer create an effective electric field (i.e., so that the stack is “self-biased”). When areas of the photoresist layer are exposed to radiation during photolithography and the radiation passes through photoresist layer and excites electrons in the underlayer, this effective electric field facilitates movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer in a direction normal to the interface between the underlayer and the photoresist layer. Movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer improves photoresist layer development and pattern resolution.

公开(公告)号：US10782606B2

公开(公告)日：2020-09-22

申请号：US16022752

申请日：2018-06-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yong Liang ,  Lei Sun ,  Yongan Xu ,  Craig D. Higgins

IPC: G03F1/22 ,  G03F7/20

Abstract: Disclosed are embodiments of a multi-layer stack and photolithography methods and systems that employ such a stack. The disclosed multi-layer stacks include a photoresist layer on an underlayer. The photoresist layer and underlayer are made of different materials, which are selected so that valence and conduction band offsets between the underlayer and photoresist layer create an effective electric field (i.e., so that the stack is “self-biased”). When areas of the photoresist layer are exposed to radiation during photolithography and the radiation passes through photoresist layer and excites electrons in the underlayer, this effective electric field facilitates movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer in a direction normal to the interface between the underlayer and the photoresist layer. Movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer improves photoresist layer development and pattern resolution.

公开(公告)号：US10353288B2

公开(公告)日：2019-07-16

申请号：US15824293

申请日：2017-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vineet Sharma ,  Sohan S. Mehta ,  Craig D. Higgins ,  Sunil K. Singh ,  Feng Wang

IPC: G03B27/42 ,  G03F7/26 ,  G03F7/00 ,  G03F7/38

Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.

公开(公告)号：US20190163054A1

公开(公告)日：2019-05-30

申请号：US15824293

申请日：2017-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vineet Sharma ,  Sohan S. Mehta ,  Craig D. Higgins ,  Sunil K. Singh ,  Feng Wang

IPC: G03F7/00 ,  G03F7/38

CPC classification number: G03F7/0035 ,  G03F7/38

Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.

公开(公告)号：US20190079408A1

公开(公告)日：2019-03-14

申请号：US15698775

申请日：2017-09-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sohan Singh Mehta ,  Mark C. Duggan ,  Sunil Kumar Singh ,  Robert Justin Morgan ,  SherJang Singh ,  Ravi Prakash Srivastava ,  Craig D. Higgins ,  Jason L. Behnke ,  Vineet Sharma

IPC: G03F7/32

Abstract: The disclosure is directed to a method for lithographic patterning. The method may include: exposing a photoresist to a radiant energy; developing the photoresist in a first developer, thereby creating an opening within the photoresist including sidewalls having a slant; and developing the photoresist in a second developer immediately after the developing of the photoresist in the first developer, thereby reducing the slant of the sidewalls of the opening. Where the photoresist is a positive tone development (PTD) photoresist, the first developer may include a positive developer, and the second developer may include a negative developer. Where the photoresist is a negative tone development (NTD) photoresist, the first developer may include a negative developer, and the second developer may include a positive developer.