公开(公告)号：US20200219760A1

公开(公告)日：2020-07-09

申请号：US16241441

申请日：2019-01-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Johnatan A. KANTAROVSKY ,  Siva P. ADUSUMILLI ,  Vibhor JAIN

IPC: H01L21/762 ,  H01L49/02 ,  H01L29/161 ,  H01L21/3065 ,  H01L21/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to cavity structures under shallow trench isolation regions and methods of manufacture. The structure includes: one or more cavity structures provided in a substrate material and sealed with an epitaxial material; and a shallow trench isolation region directly above the one or more cavity structures in the substrate material.