公开(公告)号：US20210074730A1

公开(公告)日：2021-03-11

申请号：US16561956

申请日：2019-09-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  Siva P. ADUSUMILLI ,  Michel J. ABOU-KHALIL

IPC: H01L27/12 ,  H01L27/02 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L21/3065 ,  H01L29/40 ,  H01L21/762 ,  H01L21/311 ,  H01L21/02 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.

公开(公告)号：US20200235038A1

公开(公告)日：2020-07-23

申请号：US16255505

申请日：2019-01-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK

IPC: H01L23/48 ,  H01L23/528 ,  H01L21/768 ,  G02B6/12 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to through-silicon vias (TSV) for heterogeneous integration of semiconductor device structures and methods of manufacture. The structure includes: a plurality of cavity structures provided in a single substrate; at least one optical device provided on two sides of the single substrate and between the plurality of cavity structures; and a through wafer optical via extending through the substrate, between the plurality of cavity structures and which exposes a backside of the at least one optical device.

公开(公告)号：US20200219760A1

公开(公告)日：2020-07-09

申请号：US16241441

申请日：2019-01-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Johnatan A. KANTAROVSKY ,  Siva P. ADUSUMILLI ,  Vibhor JAIN

IPC: H01L21/762 ,  H01L49/02 ,  H01L29/161 ,  H01L21/3065 ,  H01L21/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to cavity structures under shallow trench isolation regions and methods of manufacture. The structure includes: one or more cavity structures provided in a substrate material and sealed with an epitaxial material; and a shallow trench isolation region directly above the one or more cavity structures in the substrate material.

公开(公告)号：US20200013855A1

公开(公告)日：2020-01-09

申请号：US16575675

申请日：2019-09-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L23/66 ,  H01L29/10 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to radio frequency (RF) switches with airgap structures and methods of manufacture. The structure includes a substrate with at least one airgap structure formed in a well region under at least one gate structure, and which extends to a junction formed by a source/drain region of the at least one gate structure.

公开(公告)号：US20190312142A1

公开(公告)日：2019-10-10

申请号：US15947364

申请日：2018-04-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK ,  Anthony K. STAMPER ,  John J. ELLIS-MONAGHAN

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/84 ,  H01L21/324 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/10 ,  H01L27/12 ,  H01L21/02 ,  H01L23/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a non-planar surface features and methods of manufacture. The structure includes a cavity formed in a substrate material. The cavity is covered with epitaxial material that has a non-planar surface topography which imparts a stress component on a transistor.

公开(公告)号：US20190229185A1

公开(公告)日：2019-07-25

申请号：US15876727

申请日：2018-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Anthony K. STAMPER ,  Laura J. SCHUTZ ,  Cameron E. Luce

IPC: H01L29/06 ,  H01L27/12 ,  H01L29/78 ,  H01L21/762 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a planar surface and methods of manufacture. The structure includes a cavity formed in a substrate material and which has a curvature at its upper end. The cavity is covered with epitaxial material that has an upper planar surface.

公开(公告)号：US20200176304A1

公开(公告)日：2020-06-04

申请号：US16206375

申请日：2018-11-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER

IPC: H01L21/762 ,  H01L21/308 ,  H01L21/306 ,  H01L29/06 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to oxidized cavity structures within and under semiconductor devices and methods of manufacture. The structure includes: a substrate material; active devices over the substrate material; an oxidized trench structure extending into the substrate and surrounding the active devices; and one or more oxidized cavity structures extending from the oxidized trench structure and formed in the substrate material under the active devices.

公开(公告)号：US20190013382A1

公开(公告)日：2019-01-10

申请号：US15645655

申请日：2017-07-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L23/66 ,  H01L29/10 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to radio frequency (RF) switches with airgap structures and methods of manufacture. The structure includes a substrate with at least one airgap structure formed in a well region under at least one gate structure, and which extends to a junction formed by a source/drain region of the at least one gate structure.