公开(公告)号：US20180166383A1

公开(公告)日：2018-06-14

申请号：US15377592

申请日：2016-12-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Huy CAO ,  Zhiguo SUN ,  Joseph F. SHEPARD, JR. ,  Moosung M. CHAE

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to airgaps which isolate metal lines and methods of manufacture. The structure includes: a plurality of metal lines formed on an insulator layer; and a dielectric material completely filling a space having a first dimension between metal lines of the plurality of metal lines and providing a uniform airgap with a space having a second dimension between metal lines of the plurality of metal lines. The first dimension is larger than the second dimension.