公开(公告)号：US20190206802A1

公开(公告)日：2019-07-04

申请号：US15860775

申请日：2018-01-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xintuo DAI ,  Dongsuk PARK ,  Guoxiang NING ,  Mert KARAKOY

IPC: H01L23/544 ,  H01L21/66

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to overlay structures and methods of manufacture. The method includes locating a first plurality of offset dummy features in a first layer; locating a second plurality of offset dummy features in a second layer; measuring a distance between the first plurality of offset dummy features and the second plurality of offset dummy features; and determining that the first layer or the second layer is shifted with respect to one another based on the measurement.