公开(公告)号：US20180204761A1

公开(公告)日：2018-07-19

申请号：US15919744

申请日：2018-03-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Natalie B. FEILCHENFELD ,  Vibhor JAIN ,  Qizhi LIU

IPC: H01L21/762 ,  H01L29/868 ,  H01L29/06 ,  H01L29/66 ,  H01L29/165 ,  H01L27/08 ,  H01L29/872 ,  H01L29/16 ,  H01L29/161

Abstract: Lateral PiN diodes and Schottky diodes with low parasitic capacitance and variable breakdown voltage structures and methods of manufacture are disclosed. The structure includes a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate.