公开(公告)号：US20180166402A1

公开(公告)日：2018-06-14

申请号：US15373898

申请日：2016-12-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Viraj SARDESAI ,  William HENSON ,  Domingo FERRER LUPPI ,  Scott ALLEN ,  Emre ALPTEKIN

IPC: H01L23/62 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/53252 ,  H01L21/76816 ,  H01L21/76834 ,  H01L23/5228 ,  H01L23/5256 ,  H01L23/5283

Abstract: A semiconductor device includes a metal thin film such as an eFUSE or a precision resistor above and laterally displaced from an interconnect structure. A first dielectric layer is disposed over the interconnect structure and optionally under the metal thin film, and is adapted to prevent etching of the interconnect structure during patterning of the metal thin film. Contacts to the metal thin film and the interconnect are made through a second dielectric layer that is disposed over the metal thin film and over the interconnect.