公开(公告)号：US10727120B2

公开(公告)日：2020-07-28

申请号：US16111193

申请日：2018-08-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sean X Lin ,  Ruilong Xie ,  Guoxiang Ning ,  Lei Sun

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/58

Abstract: A method of fabricating interconnects in a semiconductor device is provided, which includes forming a metallization layer and depositing a hardmask layer over the metallization layer. A dielectric layer is deposited over the hardmask layer and an opening is formed in the dielectric layer to expose the hardmask layer. The exposed hardmask layer in the opening is etched to form an undercut beneath the dielectric layer. A metal shoulder is formed at the undercut, wherein the metal shoulder defines an aperture dimension used for forming a via opening extending to the metallization layer.