公开(公告)号：US20210035869A1

公开(公告)日：2021-02-04

申请号：US16531114

申请日：2019-08-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： WEI HONG ,  LIU JIANG ,  YANPING SHEN

IPC: H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device is provided that includes an active region above a substrate, a first gate structure, a second gate structure, a first semiconductor structure, a second semiconductor structure and a semiconductor bridge. The first gate semiconductor and the second semiconductor structure are in the active region and between the first and the second gate structures. The first semiconductor structure is adjacent to the first gate structure and a second semiconductor structure is adjacent to the second gate structure. The semiconductor bridge is in the active region electrically coupling the first and the second semiconductor structures.