公开(公告)号：US20210035869A1

公开(公告)日：2021-02-04

申请号：US16531114

申请日：2019-08-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： WEI HONG ,  LIU JIANG ,  YANPING SHEN

IPC: H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423

Abstract: A semiconductor device is provided that includes an active region above a substrate, a first gate structure, a second gate structure, a first semiconductor structure, a second semiconductor structure and a semiconductor bridge. The first gate semiconductor and the second semiconductor structure are in the active region and between the first and the second gate structures. The first semiconductor structure is adjacent to the first gate structure and a second semiconductor structure is adjacent to the second gate structure. The semiconductor bridge is in the active region electrically coupling the first and the second semiconductor structures.

公开(公告)号：US20200343142A1

公开(公告)日：2020-10-29

申请号：US16396775

申请日：2019-04-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： JIEHUI SHU ,  RINUS TEK PO LEE ,  WEI HONG ,  HUI ZANG ,  HONG YU

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/285

Abstract: The present disclosure generally relates to semiconductor device fabrication and integrated circuits. More particularly, the present disclosure relates to replacement metal gate processes and structures for transistor devices having a short channel and a long channel component. The present disclosure also relates to processes and structures for multi-gates with dissimilar threshold voltages. The present disclosure further provides a method of forming structures in a semiconductor device by forming a first and second cavities having sidewalls and bottom surfaces in a dielectric structure, where the first cavity has a narrower opening than the second cavity, forming a first material layer in the first and second cavities, forming a protective layer over the first material layer, where the protective layer fills the first cavity and conformally covers the sidewall and the bottom surfaces of the second cavity, performing a first isotropic etch on the protective layer to selectively remove a portion of the protective layer and form a retained portion of the protective layer, performing a second isotropic etch on the first material layer to selectively remove a portion of the first material layer and form a retained portion of the first material layer, removing the retained portion of the protective layer, and forming a second material layer in the first and second cavities, the second material layer being formed on the retained portion of the first material layer.