公开(公告)号：US20200335619A1

公开(公告)日：2020-10-22

申请号：US16386902

申请日：2019-04-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yanping SHEN ,  Haiting WANG ,  Hui ZANG ,  Jiehui SHU

IPC: H01L29/78 ,  H01L21/8238 ,  H01L21/8234 ,  H01L29/66

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line gate structures and methods of manufacture. The structure includes: a plurality of adjacent gate structures; a bridged gate structure composed of a plurality of the adjacent gate structures; source and drain regions adjacent to the bridged gate structure and comprising source and drain metallization features; and contacts to the bridged gate structure and the source and drain metallization features.