公开(公告)号：US09947791B2

公开(公告)日：2018-04-17

申请号：US13965322

申请日：2013-08-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hong He ,  Chiahsun Tseng ,  Junli Wang ,  Chun-chen Yeh ,  Yunpeg Yin

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78696

Abstract: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.