公开(公告)号：US20210055477A1

公开(公告)日：2021-02-25

申请号：US16549466

申请日：2019-08-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Steven M. SHANK

IPC: G02B6/125 ,  G02B1/00

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

公开(公告)号：US20210011220A1

公开(公告)日：2021-01-14

申请号：US16507642

申请日：2019-07-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB

IPC: G02B6/293 ,  G02B6/136 ,  F21V8/00 ,  G02B6/35

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.

公开(公告)号：US20190310399A1

公开(公告)日：2019-10-10

申请号：US15945347

申请日：2018-04-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey Poovannummoottil JACOB ,  Yusheng BIAN

IPC: G02B5/18 ,  G02B6/34 ,  G02B6/30

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with structured cladding and methods of manufacture. A structure includes: a grating coupler in a dielectric material; a back end of line (BEOL) multilayer stack over the dielectric material; and a multi-layered cladding structure of alternating materials directly on the BEOL multilayer stack.

公开(公告)号：US20190369309A1

公开(公告)日：2019-12-05

申请号：US16000249

申请日：2018-06-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey Poovannummoottil JACOB ,  Yusheng BIAN

IPC: G02B5/18 ,  G02B6/34 ,  G02B6/124 ,  G02B6/12 ,  G02B6/293 ,  G02B6/42

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A grating coupler structure includes: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material.

公开(公告)号：US20210041628A1

公开(公告)日：2021-02-11

申请号：US16531819

申请日：2019-08-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yusheng BIAN ,  Bo PENG ,  Michal RAKOWSKI ,  Ajey Poovannummoottil JACOB

IPC: G02B6/24

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Waveguide absorbers and methods of manufacture are provided. The waveguide structure includes a photonics component and a spirally configured waveguide absorber coupled to a node of the photonics component which reduces optical return loss.