公开(公告)号：US20200176304A1

公开(公告)日：2020-06-04

申请号：US16206375

申请日：2018-11-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER

IPC: H01L21/762 ,  H01L21/308 ,  H01L21/306 ,  H01L29/06 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to oxidized cavity structures within and under semiconductor devices and methods of manufacture. The structure includes: a substrate material; active devices over the substrate material; an oxidized trench structure extending into the substrate and surrounding the active devices; and one or more oxidized cavity structures extending from the oxidized trench structure and formed in the substrate material under the active devices.

公开(公告)号：US20190013382A1

公开(公告)日：2019-01-10

申请号：US15645655

申请日：2017-07-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L23/66 ,  H01L29/10 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to radio frequency (RF) switches with airgap structures and methods of manufacture. The structure includes a substrate with at least one airgap structure formed in a well region under at least one gate structure, and which extends to a junction formed by a source/drain region of the at least one gate structure.

公开(公告)号：US20200335612A1

公开(公告)日：2020-10-22

申请号：US16388500

申请日：2019-04-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vibhor JAIN ,  Anthony K. STAMPER ,  Steven M. SHANK ,  John J. PEKARIK

IPC: H01L29/737 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor having an emitter base junction with a silicon-oxygen lattice interface and methods of manufacture. The device includes: a collector region buried in a substrate; shallow trench isolation regions, which isolate the collector region buried in the substrate; a base region on the substrate and over the collector region; an emitter region composed of a single crystalline of semiconductor material and located over with the base region; and an oxide interface at a junction of the emitter region and the base region.

公开(公告)号：US20200013855A1

公开(公告)日：2020-01-09

申请号：US16575675

申请日：2019-09-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L23/66 ,  H01L29/10 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to radio frequency (RF) switches with airgap structures and methods of manufacture. The structure includes a substrate with at least one airgap structure formed in a well region under at least one gate structure, and which extends to a junction formed by a source/drain region of the at least one gate structure.

公开(公告)号：US20190312142A1

公开(公告)日：2019-10-10

申请号：US15947364

申请日：2018-04-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK ,  Anthony K. STAMPER ,  John J. ELLIS-MONAGHAN

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/84 ,  H01L21/324 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/10 ,  H01L27/12 ,  H01L21/02 ,  H01L23/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a non-planar surface features and methods of manufacture. The structure includes a cavity formed in a substrate material. The cavity is covered with epitaxial material that has a non-planar surface topography which imparts a stress component on a transistor.

公开(公告)号：US20190081138A1

公开(公告)日：2019-03-14

申请号：US15703220

申请日：2017-09-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qizhi LIU ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER

IPC: H01L29/06 ,  H01L27/12 ,  H01L29/10 ,  H01L21/02 ,  H01L21/764 ,  H01L21/762 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a switch with local silicon on insulator (SOI) and deep trench isolation structures and methods of manufacture. The structure a structure comprises an air gap located under a device region and bounded by an upper etch stop layer and deep trench isolation structures.

公开(公告)号：US20170250306A1

公开(公告)日：2017-08-31

申请号：US15594951

申请日：2017-05-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. ELLIS-MONAGHAN ,  John C.S. HALL ,  Marwan H. KHATER ,  Edward W. KIEWRA ,  Steven M. SHANK

IPC: H01L31/20 ,  H01L31/028 ,  H01L31/0203 ,  H01L27/146

CPC classification number: H01L31/202 ,  H01L21/02667 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14698 ,  H01L31/0203 ,  H01L31/028 ,  H01L31/208

Abstract: Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.

公开(公告)号：US20210074730A1

公开(公告)日：2021-03-11

申请号：US16561956

申请日：2019-09-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Steven M. SHANK ,  Siva P. ADUSUMILLI ,  Michel J. ABOU-KHALIL

IPC: H01L27/12 ,  H01L27/02 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L21/3065 ,  H01L29/40 ,  H01L21/762 ,  H01L21/311 ,  H01L21/02 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.

公开(公告)号：US20210055477A1

公开(公告)日：2021-02-25

申请号：US16549466

申请日：2019-08-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Steven M. SHANK

IPC: G02B6/125 ,  G02B1/00

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

公开(公告)号：US20200235038A1

公开(公告)日：2020-07-23

申请号：US16255505

申请日：2019-01-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Siva P. ADUSUMILLI ,  Steven M. SHANK

IPC: H01L23/48 ,  H01L23/528 ,  H01L21/768 ,  G02B6/12 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to through-silicon vias (TSV) for heterogeneous integration of semiconductor device structures and methods of manufacture. The structure includes: a plurality of cavity structures provided in a single substrate; at least one optical device provided on two sides of the single substrate and between the plurality of cavity structures; and a through wafer optical via extending through the substrate, between the plurality of cavity structures and which exposes a backside of the at least one optical device.