公开(公告)号：US10121665B2

公开(公告)日：2018-11-06

申请号：US15646570

申请日：2017-07-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chi Dong Nguyen ,  Klaus Hempel

IPC: H01L29/10 ,  H01L29/66 ,  H01L21/265

Abstract: A semiconductor device has an active region that includes a semiconductor layer. A transistor is formed in and above the active region, wherein the transistor has an implanted halo region that includes a halo dopant species and defines a halo dopant profile in the semiconductor layer. An implanted carbon species is positioned in the semiconductor layer, wherein the implanted carbon species defines a carbon species profile in the semiconductor layer that is substantially the same as the halo dopant profile of the implanted halo region in the semiconductor layer.

公开(公告)号：US20170316944A1

公开(公告)日：2017-11-02

申请号：US15646570

申请日：2017-07-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chi Dong Nguyen ,  Klaus Hempel

IPC: H01L21/265 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/6656 ,  H01L29/6659

Abstract: A semiconductor device has an active region that includes a semiconductor layer. A transistor is formed in and above the active region, wherein the transistor has an implanted halo region that includes a halo dopant species and defines a halo dopant profile in the semiconductor layer. An implanted carbon species is positioned in the semiconductor layer, wherein the implanted carbon species defines a carbon species profile in the semiconductor layer that is substantially the same as the halo dopant profile of the implanted halo region in the semiconductor layer.

公开(公告)号：US09735012B2

公开(公告)日：2017-08-15

申请号：US14667778

申请日：2015-03-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chi Dong Nguyen ,  Klaus Hempel

IPC: H01L29/78 ,  H01L21/225 ,  H01L21/3205 ,  H01L21/265 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method of forming a semiconductor device is provided including co-implanting a halo species and carbon in a semiconductor layer with a finite tilt angle with respect to a direction perpendicular to the surface of the semiconductor layer. Furthermore, a semiconductor device is provided including an N-channel transistor comprising a halo region made of a halo species with a dopant profile formed in a semiconductor layer and a carbon species implanted in the semiconductor layer with substantially the same dopant profile as the dopant profile of the halo region.

公开(公告)号：US20160284549A1

公开(公告)日：2016-09-29

申请号：US14667778

申请日：2015-03-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chi Dong Nguyen ,  Klaus Hempel

IPC: H01L21/225 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method of forming a semiconductor device is provided including co-implanting a halo species and carbon in a semiconductor layer with a finite tilt angle with respect to a direction perpendicular to the surface of the semiconductor layer. Furthermore, a semiconductor device is provided including an N-channel transistor comprising a halo region made of a halo species with a dopant profile formed in a semiconductor layer and a carbon species implanted in the semiconductor layer with substantially the same dopant profile as the dopant profile of the halo region.

Abstract translation: 提供一种形成半导体器件的方法，包括在半导体层中相对于与半导体层的表面垂直的方向具有有限倾斜角共同注入卤素物质和碳。 此外，提供了一种半导体器件，其包括N沟道晶体管，该N沟道晶体管包括由在半导体层中形成的掺杂剂分布的卤素物质形成的卤素区域，并且注入到半导体层中的碳物质具有与掺杂剂分布基本相同的掺杂剂分布 的光晕区域。