公开(公告)号：US20150311083A1

公开(公告)日：2015-10-29

申请号：US14259497

申请日：2014-04-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Changyong XIAO ,  Hoong Shing WONG ,  Deepasree KONDUPARTHI ,  Rohit PAL

IPC: H01L21/28

CPC classification number: H01L29/6653 ,  H01L21/823842 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/7842

Abstract: A method includes providing a gate structure having a dummy gate, a first spacer along a side of the gate. The dummy gate and the spacer are removed to expose a gate dielectric. A second spacer is deposited on at least one side of a gate structure cavity and a top of the gate dielectric. A bottom portion of the second spacer is removed to expose the gate dielectric and the gate structure is wet cleaned.

Abstract translation: 一种方法包括提供具有虚拟栅极的栅极结构，沿栅极侧面的第一间隔物。 去除虚拟栅极和间隔物以露出栅极电介质。 第二间隔物沉积在栅极结构腔的至少一侧和栅极电介质的顶部。 去除第二间隔件的底部以暴露栅极电介质，并且将栅极结构湿式清洁。