公开(公告)号：US20200335435A1

公开(公告)日：2020-10-22

申请号：US16918053

申请日：2020-07-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Xiaoqiang Zhang ,  Haizhou Yin ,  Moosung M. Chae ,  Jinping Liu ,  Hui Zang

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/525

Abstract: Interconnect structures and methods of fabricating an interconnect structure. A first interconnect and a second interconnect extend in a first direction in a interlayer dielectric layer and are spaced apart from each other. A third interconnect is arranged in the interlayer dielectric layer to connect the first interconnect with the second interconnect. The first interconnect and the second interconnect have a first width, and the third interconnect has a second width that is less than the first width.

公开(公告)号：US20190326209A1

公开(公告)日：2019-10-24

申请号：US15959727

申请日：2018-04-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Xiaoqiang Zhang ,  Haizhou Yin ,  Moosung M. Chae ,  Jinping Liu ,  Hui Zang

IPC: H01L23/528 ,  H01L23/525 ,  H01L21/768

Abstract: Interconnect structures and methods of fabricating an interconnect structure. A first interconnect and a second interconnect extend in a first direction in a interlayer dielectric layer and are spaced apart from each other. A third interconnect is arranged in the interlayer dielectric layer to connect the first interconnect with the second interconnect. The first interconnect and the second interconnect have a first width, and the third interconnect has a second width that is less than the first width.

公开(公告)号：US10784195B2

公开(公告)日：2020-09-22

申请号：US15959727

申请日：2018-04-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Xiaoqiang Zhang ,  Haizhou Yin ,  Moosung M. Chae ,  Jinping Liu ,  Hui Zang

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/525

Abstract: Interconnect structures and methods of fabricating an interconnect structure. A first interconnect and a second interconnect extend in a first direction in a interlayer dielectric layer and are spaced apart from each other. A third interconnect is arranged in the interlayer dielectric layer to connect the first interconnect with the second interconnect. The first interconnect and the second interconnect have a first width, and the third interconnect has a second width that is less than the first width.