公开(公告)号：US09825031B1

公开(公告)日：2017-11-21

申请号：US15229292

申请日：2016-08-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guillaume Bouche ,  Andy C. Wei ,  Jason E. Stephens ,  David M. Permana ,  Jagannathan Vasudevan

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/768

CPC classification number: H01L27/0886 ,  H01L21/76843 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823475 ,  H01L29/41791 ,  H01L29/66795

Abstract: A method includes forming first and second contact openings in a first dielectric layer. At least the first contact opening is at least partially lined with a liner layer. A first conductive feature is formed in the first contact opening and a second conductive feature is formed in the second contact opening. A portion of the liner layer adjacent a top surface of the first dielectric layer is removed to define a recess. A barrier layer is formed above the first dielectric layer and in the recess. The barrier layer has a first dielectric constant greater than a second dielectric constant of the first dielectric layer. A second dielectric layer is formed above the barrier layer. A third conductive feature is formed embedded in the second dielectric layer and contacting the second conductive feature.