公开(公告)号：US08904324B2

公开(公告)日：2014-12-02

申请号：US13836057

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Navneet Jain ,  Paul D. Mesa ,  Qinglei Wang ,  Qi Xiang ,  Mahbub Rashed

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/505 ,  H01L29/66795

Abstract: A parameterized cell for planar and finFET designs is provided. A parameterized cell (Pcell) describing a planar design is integrated with fin-based design criteria, including fin pitch. For material regions in a planar design that have a corresponding region in a fin design, a quantized value based on the fin pitch is computed. The material can include regions such as active area silicon, contact regions, and local interconnect regions.

Abstract translation: 提供了用于平面和finFET设计的参数化单元。 描述平面设计的参数化单元（Pcell）集成了基于翅片的设计标准，包括翅片间距。 对于在翅片设计中具有对应区域的平面设计中的材料区域，计算基于翅片间距的量化值。 该材料可以包括诸如有源区硅，接触区域和局部互连区域的区域。

公开(公告)号：US20140282323A1

公开(公告)日：2014-09-18

申请号：US13836057

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Navneet Jain ,  Paul D. Mesa ,  Qinglei Wang ,  Qi Xiang ,  Mahbub Rashed

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/505 ,  H01L29/66795

Abstract: A parameterized cell for planar and finFET designs is provided. A parameterized cell (Pcell) describing a planar design is integrated with fin-based design criteria, including fin pitch. For material regions in a planar design that have a corresponding region in a fin design, a quantized value based on the fin pitch is computed. The material can include regions such as active area silicon, contact regions, and local interconnect regions.

Abstract translation: 提供了用于平面和finFET设计的参数化单元。 描述平面设计的参数化单元（Pcell）集成了基于翅片的设计标准，包括翅片间距。 对于在翅片设计中具有对应区域的平面设计中的材料区域，计算基于翅片间距的量化值。 该材料可以包括诸如有源区硅，接触区域和局部互连区域的区域。