公开(公告)号：US09324868B2

公开(公告)日：2016-04-26

申请号：US14463057

申请日：2014-08-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ran Ruby Yan ,  Ralf Richter ,  Jan Hoentschel ,  Hans-Jurgen Thees

IPC: H01L21/00 ,  H01L21/84 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/306 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L29/7853 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02639 ,  H01L21/30608 ,  H01L21/76224 ,  H01L21/76283 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7855

Abstract: FinFET devices with epitaxially grown fins and methods for fabricating them are provided. Embodiments include forming at least two shallow trench isolation (STI) regions, filled with dielectric material, adjacent to but separate from each other in a silicon substrate; epitaxially growing a silicon-based layer between each adjacent pair of STI regions to form a fin with a non-rectangular cross-section extending from each STI region to each adjacent STI region; forming a gate oxide over and perpendicular to each fin; and forming a gate electrode over the gate oxide to form a FinFET.

Abstract translation: 提供具有外延生长翅片的FinFET器件及其制造方法。 实施例包括在硅衬底中相邻但彼此分开形成填充有电介质材料的至少两个浅沟槽隔离（STI）区域; 在每个相邻的一对STI区域之间外延生长硅基层以形成具有从每个STI区域延伸到每个相邻STI区域的非矩形横截面的翅片; 在每个翅片上形成栅极氧化物并垂直于每个鳍片; 以及在所述栅极氧化物上形成栅电极以形成FinFET。