公开(公告)号：US20150130026A1

公开(公告)日：2015-05-14

申请号：US14074981

申请日：2013-11-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sonia GHOSH ,  Randy MANN ,  Norman CHEN ,  Shaowen GAO

IPC: H01L29/06 ,  H01L21/66

CPC classification number: H01L23/528 ,  G06F17/5068 ,  H01L21/32139 ,  H01L22/12 ,  H01L23/5226 ,  H01L27/0207 ,  H01L27/1116 ,  H01L2924/0002 ,  Y02T10/82 ,  H01L2924/00

Abstract: Methods for forming a semiconductor layer, such as a metal1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.

Abstract translation: 公开了形成半导体层的方法，例如金属层，其具有最小宽度特征被隔开大于最小间距的距离，以及所得到的器件。 实施例可以包括确定在半导体层内具有最小宽度的第一形状和第二形状，其中第一形状和第二形状之间的距离大于最小间距，确定第一形状和第二形状之间的中间形状 并且在所述中间形状中指定虚拟形状，其中所述虚拟形状距所述第一形状处于最小间距。

公开(公告)号：US20160093565A1

公开(公告)日：2016-03-31

申请号：US14953864

申请日：2015-11-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sonia GHOSH ,  Randy MANN ,  Norman CHEN ,  Shaowen GAO

IPC: H01L23/528 ,  H01L27/11 ,  H01L23/522

CPC classification number: H01L23/528 ,  G06F17/5068 ,  H01L21/32139 ,  H01L22/12 ,  H01L23/5226 ,  H01L27/0207 ,  H01L27/1116 ,  H01L2924/0002 ,  Y02T10/82 ,  H01L2924/00

Abstract: Methods for forming a semiconductor layer, such as a metal 1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.

Abstract translation: 公开了形成半导体层的方法，例如金属1层，其具有最小宽度特征被分开大于最小间距的距离，以及所得到的器件。 实施例可以包括确定在半导体层内具有最小宽度的第一形状和第二形状，其中第一形状和第二形状之间的距离大于最小间距，确定第一形状和第二形状之间的中间形状 并且在所述中间形状中指定虚拟形状，其中所述虚拟形状距所述第一形状处于最小间距。

公开(公告)号：US20150102826A1

公开(公告)日：2015-04-16

申请号：US14054040

申请日：2013-10-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Randy MANN ,  Sandeep PURI ,  Sonia GHOSH ,  Anuj GUPTA ,  Xusheng WU

IPC: G01B7/02 ,  G01R27/26

CPC classification number: H01L22/14 ,  G01B2210/56 ,  G06F17/5063 ,  G06F17/5068

Abstract: Methods and design structures for extraction of transistor channel width are disclosed. Embodiments may include determining effective channel widths of transistors of a plurality of integrated circuits as a function of drawn channel widths of the transistors, and determining a target channel width for a target transistor based on the effective channel widths.

Abstract translation: 公开了用于提取晶体管沟道宽度的方法和设计结构。 实施例可以包括根据晶体管的拉出沟道宽度确定多个集成电路的晶体管的有效沟道宽度，以及基于有效沟道宽度确定目标晶体管的目标沟道宽度。