公开(公告)号：US20160260607A1

公开(公告)日：2016-09-08

申请号：US14639620

申请日：2015-03-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Remi Riviere ,  Thomas Merelle

IPC: H01L21/033 ,  H01L27/11

CPC classification number: H01L27/1108 ,  H01L21/0274 ,  H01L21/32139 ,  H01L27/1104

Abstract: A method includes providing a semiconductor structure and forming a plurality of gate structures over the semiconductor structure. The formation of the plurality of gate structures includes a first patterning process. The first patterning process includes a first photoresist exposure process and a second photoresist exposure process. In the first photoresist exposure process, a first photomask and a first illumination source pattern are used. The first photomask is adapted for providing a first gate cut photoresist pattern over a first area of the semiconductor structure. In the second photoresist exposure process, a second photomask and a second illumination source pattern that is different from the first illumination source pattern are used. The second photomask is adapted for providing a second gate cut photoresist pattern over a second area of the semiconductor structure.

Abstract translation: 一种方法包括提供半导体结构并在半导体结构上形成多个栅极结构。 多个栅极结构的形成包括第一图案化工艺。 第一图案化工艺包括第一光致抗蚀剂曝光工艺和第二光致抗蚀剂曝光工艺。 在第一光致抗蚀剂曝光工艺中，使用第一光掩模和第一照明源图案。 第一光掩模适于在半导体结构的第一区域上提供第一栅极切割光致抗蚀剂图案。 在第二光刻胶曝光处理中，使用不同于第一照明光源图案的第二光掩模和第二照明光源图案。 第二光掩模适于在半导体结构的第二区域上提供第二栅极切割光致抗蚀剂图案。