公开(公告)号：US10957578B2

公开(公告)日：2021-03-23

申请号：US16146413

申请日：2018-09-28

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Wei Hong ,  Hui Zang ,  Hsien-Ching Lo ,  Zhenyu Hu ,  Liu Jiang

IPC: H01L21/762 ,  H01L27/12 ,  H01L29/78 ,  H01L21/02 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a single diffusion break device and methods of manufacture. The structure includes a single diffusion break structure with a fill material between sidewall spacers of the single diffusion break structure and a channel oxidation below the fill material.