公开(公告)号：US20220262930A1

公开(公告)日：2022-08-18

申请号：US17176251

申请日：2021-02-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  Judson R. Holt ,  Tayel Nesheiwat ,  John J. Pekarik ,  Christopher Durcan

IPC: H01L29/732 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66

Abstract: Device structures and fabrication methods for a bipolar junction transistor. The device structure includes a substrate and a trench isolation region in the substrate. The trench isolation region surrounds an active region of the substrate. The device structure further includes a collector in the active region of the substrate, a base layer having a first section positioned on the active region and a second section oriented at an angle relative to the first section, an emitter positioned on the first section of the base layer, and an extrinsic base layer positioned over the trench isolation region and adjacent to the emitter. The second section of the base layer is laterally positioned between the extrinsic base layer and the emitter.

公开(公告)号：US11695064B2

公开(公告)日：2023-07-04

申请号：US17176251

申请日：2021-02-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  Judson R. Holt ,  Tayel Nesheiwat ,  John J. Pekarik ,  Christopher Durcan

IPC: H01L29/732 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/732 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/66272

Abstract: Device structures and fabrication methods for a bipolar junction transistor. The device structure includes a substrate and a trench isolation region in the substrate. The trench isolation region surrounds an active region of the substrate. The device structure further includes a collector in the active region of the substrate, a base layer having a first section positioned on the active region and a second section oriented at an angle relative to the first section, an emitter positioned on the first section of the base layer, and an extrinsic base layer positioned over the trench isolation region and adjacent to the emitter. The second section of the base layer is laterally positioned between the extrinsic base layer and the emitter.