公开(公告)号：US11448822B2

公开(公告)日：2022-09-20

申请号：US17131997

申请日：2020-12-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson R. Holt ,  Yusheng Bian ,  Dali Shao

IPC: G02B6/12 ,  G02B6/122 ,  H01L29/06 ,  G02B6/30

Abstract: Disclosed is a silicon-on-insulator (SOI) chip structure with a substrate-embedded optical waveguide. Also disclosed is a method for forming the SOI chip structure. In the method, an optical waveguide is formed within a trench in a bulk substrate prior to a wafer bonding process that results in the SOI structure. Subsequently, front-end-of-the-line (FEOL) processing can be performed to form additional optical devices and/or electronic devices in and/or above the silicon layer. By embedding an optical waveguide within the substrate prior to wafer bonding as opposed to forming it during FEOL processing, strict limitations on the dimensions of the core layer of the optical waveguide are avoided. The core layer of the substrate-embedded optical waveguide can be relatively large such that the cut-off wavelength can be relatively long. Thus, such a substrate-embedded optical waveguide brings different functionality to the SOI chip structure as compared to FEOL optical waveguides.

公开(公告)号：US20220196909A1

公开(公告)日：2022-06-23

申请号：US17131997

申请日：2020-12-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson R. Holt ,  Yusheng Bian ,  Dali Shao

IPC: G02B6/122 ,  G02B6/12 ,  H01L29/06

Abstract: Disclosed is a silicon-on-insulator (SOI) chip structure with a substrate-embedded optical waveguide. Also disclosed is a method for forming the SOI chip structure. In the method, an optical waveguide is formed within a trench in a bulk substrate prior to a wafer bonding process that results in the SOI structure. Subsequently, front-end-of-the-line (FEOL) processing can be performed to form additional optical devices and/or electronic devices in and/or above the silicon layer. By embedding an optical waveguide within the substrate prior to wafer bonding as opposed to forming it during FEOL processing, strict limitations on the dimensions of the core layer of the optical waveguide are avoided. The core layer of the substrate-embedded optical waveguide can be relatively large such that the cut-off wavelength can be relatively long. Thus, such a substrate-embedded optical waveguide brings different functionality to the SOI chip structure as compared to FEOL optical waveguides.

公开(公告)号：US11158635B2

公开(公告)日：2021-10-26

申请号：US16832139

申请日：2020-03-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Dali Shao ,  Tao Chu ,  Liqiao Qin

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49

Abstract: One illustrative IC product disclosed herein includes a semiconductor substrate and a first transistor device formed on the semiconductor substrate. The first transistor device comprises a first gate structure. The first gate structure comprises a gate insulation layer, a first layer of titanium nitride (TiN) positioned above the gate insulation layer, a layer of titanium silicon nitride (TiSiN) positioned above the first layer of TiN and a second layer of titanium nitride (TiN) positioned above the layer of TiSiN.

公开(公告)号：US20210305251A1

公开(公告)日：2021-09-30

申请号：US16832139

申请日：2020-03-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Dali Shao ,  Tao Chu ,  Liqiao Qin

IPC: H01L27/092 ,  H01L29/49 ,  H01L21/8238 ,  H01L21/28

Abstract: One illustrative IC product disclosed herein includes a semiconductor substrate and a first transistor device formed on the semiconductor substrate. The first transistor device comprises a first gate structure. The first gate structure comprises a gate insulation layer, a first layer of titanium nitride (TiN) positioned above the gate insulation layer, a layer of titanium silicon nitride (TiSiN) positioned above the first layer of TiN and a second layer of titanium nitride (TiN) positioned above the layer of TiSiN.