公开(公告)号：US20210249518A1

公开(公告)日：2021-08-12

申请号：US16788922

申请日：2020-02-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Wei Hong ,  Yanping Shen ,  Domingo A. Ferrer ,  Hong Yu

IPC: H01L29/45 ,  H01L29/417 ,  H01L29/08 ,  H01L27/088 ,  H01L29/165 ,  H01L21/285 ,  H01L29/66

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure with a niobium-based silicide layer. An IC structure according to the disclosure includes a transistor on a substrate, the transistor including a gate structure above the substrate and a source/drain (S/D) region on the substrate adjacent the gate structure. A niobium-based silicide layer is on at least an upper surface the S/D region of the transistor, and extends across substantially an entire width of the S/D region. An S/D contact to the S/D region is in contact with the niobium-based silicide layer.

公开(公告)号：US11239336B2

公开(公告)日：2022-02-01

申请号：US16788922

申请日：2020-02-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Wei Hong ,  Yanping Shen ,  Domingo A. Ferrer ,  Hong Yu

IPC: H01L29/45 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08 ,  H01L27/088 ,  H01L29/165 ,  H01L29/78 ,  H01L21/285

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure with a niobium-based silicide layer. An IC structure according to the disclosure includes a transistor on a substrate, the transistor including a gate structure above the substrate and a source/drain (S/D) region on the substrate adjacent the gate structure. A niobium-based silicide layer is on at least an upper surface the S/D region of the transistor, and extends across substantially an entire width of the S/D region. An S/D contact to the S/D region is in contact with the niobium-based silicide layer.