公开(公告)号：US11233137B2

公开(公告)日：2022-01-25

申请号：US16789936

申请日：2020-02-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Dominic J. Schepis ,  Alexander Reznicek

IPC: H01L29/66 ,  H01L29/49 ,  H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L29/423 ,  H01L29/51

Abstract: Devices and methods of fabricating vertical nanowires on semiconductor devices. A doped silicon substrate, a first insulator over the doped silicon substrate, a gate conductor over the first insulator, and a second insulator over the gate conductor. Silicon nanowires extend from the top surface of the substrate through the first insulator, the gate conductor, and the second insulator. A first contact extends from the gate conductor through the second insulator, a second contact extends from the substrate through the first insulator, the gate conductor, and the second insulator layer, and an insulating spacer material is positioned between the second contact and the gate conductor.