公开(公告)号：US11374092B2

公开(公告)日：2022-06-28

申请号：US16784813

申请日：2020-02-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： John J. Pekarik ,  Vibhor Jain ,  Herbert Ho ,  Claude Ortolland ,  Qizhi Liu

IPC: H01L29/08 ,  H01L29/165 ,  H01L29/737 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to virtual bulk in semiconductor on insulator technology and methods of manufacture. The structure includes a heterojunction bipolar transistor formed on a semiconductor on insulator (SOI) wafer with a doped sub-collector material in a buried insulator region under a semiconductor substrate of the SOI wafer.

公开(公告)号：US11063140B2

公开(公告)日：2021-07-13

申请号：US16784683

申请日：2020-02-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. Pekarik ,  Anthony K. Stamper ,  Vibhor Jain ,  Steven M. Shank ,  John J. Ellis-Monaghan ,  Herbert Ho ,  Qizhi Liu

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L27/082

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first heterojunction bipolar transistor includes a first emitter, a first collector, and a first base layer having a portion positioned between the first emitter and the first collector. A second heterojunction bipolar transistor includes a second emitter, a second collector, and a second base layer having a portion positioned between the second emitter and the second collector. The first and second base layers each comprise silicon-germanium, the first base layer includes a first germanium profile, and the second base layer includes a second germanium profile that is identical to the first germanium profile.

公开(公告)号：US20210098612A1

公开(公告)日：2021-04-01

申请号：US16784683

申请日：2020-02-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. Pekarik ,  Anthony K. Stamper ,  Vibhor Jain ,  Steven M. Shank ,  John J. Ellis-Monaghan ,  Herbert Ho ,  Qizhi Liu

IPC: H01L29/737 ,  H01L29/423 ,  H01L29/08 ,  H01L29/66

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first heterojunction bipolar transistor includes a first emitter, a first collector, and a first base layer having a portion positioned between the first emitter and the first collector. A second heterojunction bipolar transistor includes a second emitter, a second collector, and a second base layer having a portion positioned between the second emitter and the second collector. The first and second base layers each comprise silicon-germanium, the first base layer includes a first germanium profile, and the second base layer includes a second germanium profile that is identical to the first germanium profile.

公开(公告)号：US11217685B2

公开(公告)日：2022-01-04

申请号：US16909376

申请日：2020-06-23

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Herbert Ho ,  Vibhor Jain ,  John J. Pekarik ,  Claude Ortolland ,  Judson R. Holt ,  Qizhi Liu ,  Viorel Ontalus

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a device with a marker layer and methods of manufacture. The device includes: a collector region; an intrinsic base region above the collector region; an emitter region comprising emitter material and a marker layer vertically between the intrinsic base region and the emitter material; and an extrinsic base region in electrical contact with the intrinsic base region.

公开(公告)号：US11145725B2

公开(公告)日：2021-10-12

申请号：US16823005

申请日：2020-03-18

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Qizhi Liu ,  Vibhor Jain ,  Judson R. Holt ,  Herbert Ho ,  Claude Ortolland ,  John J. Pekarik

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region in electrical connection to the sub-collector region; an emitter located adjacent to the collector region and comprising emitter material, recessed sidewalls on the emitter material and an extension region extending at an upper portion of the emitter material above the recessed sidewalls; and an extrinsic base separated from the emitter by the recessed sidewalls.