公开(公告)号：US11158635B2

公开(公告)日：2021-10-26

申请号：US16832139

申请日：2020-03-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Dali Shao ,  Tao Chu ,  Liqiao Qin

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49

Abstract: One illustrative IC product disclosed herein includes a semiconductor substrate and a first transistor device formed on the semiconductor substrate. The first transistor device comprises a first gate structure. The first gate structure comprises a gate insulation layer, a first layer of titanium nitride (TiN) positioned above the gate insulation layer, a layer of titanium silicon nitride (TiSiN) positioned above the first layer of TiN and a second layer of titanium nitride (TiN) positioned above the layer of TiSiN.

公开(公告)号：US20210305251A1

公开(公告)日：2021-09-30

申请号：US16832139

申请日：2020-03-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Dali Shao ,  Tao Chu ,  Liqiao Qin

IPC: H01L27/092 ,  H01L29/49 ,  H01L21/8238 ,  H01L21/28

Abstract: One illustrative IC product disclosed herein includes a semiconductor substrate and a first transistor device formed on the semiconductor substrate. The first transistor device comprises a first gate structure. The first gate structure comprises a gate insulation layer, a first layer of titanium nitride (TiN) positioned above the gate insulation layer, a layer of titanium silicon nitride (TiSiN) positioned above the first layer of TiN and a second layer of titanium nitride (TiN) positioned above the layer of TiSiN.