公开(公告)号：US20210358865A1

公开(公告)日：2021-11-18

申请号：US16876532

申请日：2020-05-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anton Tokranov ,  Kai Sun ,  Elizabeth Strehlow ,  James Mazza ,  David Pritchard ,  Heng Yang ,  Mohamed Rabie

IPC: H01L23/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.

公开(公告)号：US11276651B2

公开(公告)日：2022-03-15

申请号：US16876532

申请日：2020-05-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anton Tokranov ,  Kai Sun ,  Elizabeth Strehlow ,  James Mazza ,  David Pritchard ,  Heng Yang ,  Mohamed Rabie

IPC: H01L23/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

Abstract: An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.