公开(公告)号：US11276651B2

公开(公告)日：2022-03-15

申请号：US16876532

申请日：2020-05-18

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Anton Tokranov ,  Kai Sun ,  Elizabeth Strehlow ,  James Mazza ,  David Pritchard ,  Heng Yang ,  Mohamed Rabie

IPC分类号： H01L23/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

摘要： An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.

公开(公告)号：US11037937B2

公开(公告)日：2021-06-15

申请号：US16689330

申请日：2019-11-20

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Meixiong Zhao ,  Randy W. Mann ,  Sanjay Parihar ,  Anton Tokranov ,  Hong Yu ,  Hongliang Shen ,  Guoxiang Ning

IPC分类号： H01L27/11 ,  H01L21/8238 ,  H01L21/8239

摘要： Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.

公开(公告)号：US20210358865A1

公开(公告)日：2021-11-18

申请号：US16876532

申请日：2020-05-18

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Anton Tokranov ,  Kai Sun ,  Elizabeth Strehlow ,  James Mazza ,  David Pritchard ,  Heng Yang ,  Mohamed Rabie

IPC分类号： H01L23/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

摘要： An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.

公开(公告)号：US20210151443A1

公开(公告)日：2021-05-20

申请号：US16689330

申请日：2019-11-20

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Meixiong Zhao ,  Randy W. Mann ,  Sanjay Parihar ,  Anton Tokranov ,  Hong Yu ,  Hongliang Shen ,  Guoxiang Ning

IPC分类号： H01L27/11 ,  H01L21/8239 ,  H01L21/8238

摘要： Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.