公开(公告)号：US20230117591A1

公开(公告)日：2023-04-20

申请号：US17504051

申请日：2021-10-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Richard J. RASSEL ,  Johnatan A. KANTAROVSKY ,  Zhong-Xiang HE ,  Mark D. LEVY ,  Michel J. ABOU-KHALIL

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor device with a dual isolation structure and methods of manufacture. The structure includes: a dual isolation structure including semiconductor material; and an active device region including a channel material and a gate metal material over the channel material. The channel material is between the dual isolation structure and the gate metal material includes a bottom surface not extending beyond a sidewall of the dual isolation structure.