公开(公告)号：US20250120156A1

公开(公告)日：2025-04-10

申请号：US18378312

申请日：2023-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett T. Cucci ,  Jacob M. DeAngelis ,  Spencer H. Porter ,  Trevor S. Wills ,  Mark D. Levy

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure on the semiconductor substrate; a gate metal connecting to the gate structure; and a field plate connected to a source region of the gate structure. The gate metal and the field plate include a same material.

公开(公告)号：US20230223337A1

公开(公告)日：2023-07-13

申请号：US17572681

申请日：2022-01-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mark D. Levy ,  Fuad H. Al-Amoody ,  Siva P. Adusumilli ,  Spencer H. Porter ,  Ephrem Gebreselasie ,  Rajendran Krishnasamy

IPC: H01L23/525 ,  H01L21/768 ,  H01L23/36 ,  H01L23/34 ,  H01L23/522

CPC classification number: H01L23/5256 ,  H01L21/76877 ,  H01L23/36 ,  H01L23/345 ,  H01L21/76832 ,  H01L23/5226 ,  H01L21/76816

Abstract: A semiconductor structure includes a semiconductor device (e.g., an e-fuse or photonic device) and a metallic heating element adjacent thereto. The heating element has a lower portion within a middle of the line (MOL) dielectric layer adjacent to the semiconductor device and an upper portion with a tapered top end that extends into a back end of the line (BEOL) dielectric layer. A method of forming the semiconductor structure includes forming a cavity such that it has both a lower section, which extends from a top surface of a MOL dielectric layer downward toward a semiconductor device, and an upper section, which extends from the top surface of the MOL dielectric layer upward and which is capped by an area of a BEOL dielectric layer having a concave bottom surface. A metallic fill material can then be deposited into the cavity (e.g., through via openings) to form the heating element.

公开(公告)号：US11978661B2

公开(公告)日：2024-05-07

申请号：US17118697

申请日：2020-12-11

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Fuad H. Al-Amoody ,  Felix P. Anderson ,  Spencer H. Porter ,  Mark D. Levy ,  Siva P. Adusumilli

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/417 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865 ,  H01L23/5226 ,  H01L29/41725 ,  H01L23/5283 ,  H01L23/53295

Abstract: Disclosed is a structure with ultralow-K (ULK) dielectric-gap wrapped contact(s). The structure includes an opening, which extends through a dielectric layer and is aligned above a device. A contact is within the opening and electrically connected to the device. Instead of the contact completely filling the opening, a ULK dielectric-gap (e.g., an air or gas-filled gap or a void) at least partially separates the contact from the sidewall(s) of the contact opening and further wraps laterally around the contact. Also disclosed is a method for forming the structure and, particularly, for forming a ULK dielectric-gap by etching back an exposed top end of an adhesive layer initially lining a contact opening to form a gap between the sidewall(s) of the opening and the contact and then capping the gap with an additional dielectric layer such that the gap is filled with air or gas or is under vacuum.

公开(公告)号：US20220189818A1

公开(公告)日：2022-06-16

申请号：US17118697

申请日：2020-12-11

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Fuad H. Al-Amoody ,  Felix P. Anderson ,  Spencer H. Porter ,  Mark D. Levy ,  Siva P. Adusumilli

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/417

Abstract: Disclosed is a structure with ultralow-K (ULK) dielectric-gap wrapped contact(s). The structure includes an opening, which extends through a dielectric layer and is aligned above a device. A contact is within the opening and electrically connected to the device. Instead of the contact completely filling the opening, a ULK dielectric-gap (e.g., an air or gas-filled gap or a void) at least partially separates the contact from the sidewall(s) of the contact opening and further wraps laterally around the contact. Also disclosed is a method for forming the structure and, particularly, for forming a ULK dielectric-gap by etching back an exposed top end of an adhesive layer initially lining a contact opening to form a gap between the sidewall(s) of the opening and the contact and then capping the gap with an additional dielectric layer such that the gap is filled with air or gas or is under vacuum.