公开(公告)号：US20240332368A1

公开(公告)日：2024-10-03

申请号：US18129457

申请日：2023-03-31

Applicant: GaN Systems Inc.

Inventor： Vineet Unni ,  Thomas MacElwee

IPC: H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/2003 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786

Abstract: A GaN semiconductor power transistor structure with a stepped gate field plate, and a method of fabrication is disclosed. The stepped gate field plate is formed using contact metal and/or interconnect metal. The stepped structure of the gate field plate is defined by dielectric etching to form openings for the stepped gate field plate, and the dielectric thickness under the gate field plate is sized and stepped to shape appropriately the electric field in the region between the gate and drain. The resulting stepped gate field plate structure is less sensitive to limitations of stepped field plates fabricated by a lift-off metal process.