公开(公告)号：US20240395932A1

公开(公告)日：2024-11-28

申请号：US18322212

申请日：2023-05-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： John L. LEMON ,  Hong YU ,  Haiting WANG ,  Hui ZHAN

IPC: H01L29/78 ,  H01L21/84 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a wraparound gate structure and methods of manufacture. The structure includes: a channel region comprising semiconductor material; an isolation structure surrounding the channel region; a divot within the isolation structure; and a gate structure comprising gate material within the divot and surrounding the channel region.