公开(公告)号：US20240234425A1

公开(公告)日：2024-07-11

申请号：US18095746

申请日：2023-01-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Tamilmani ETHIRAJAN ,  Kaustubh SHANBHAG ,  George R. MULFINGER ,  Anton V. TOKRANOV ,  Eric S. KOZARSKY ,  Hui ZHAN

IPC: H01L27/12 ,  H01L21/84 ,  H01L23/535 ,  H01L29/78

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L23/535 ,  H01L29/7838

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures within the active region; a plurality of gate structures overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.

公开(公告)号：US20240395932A1

公开(公告)日：2024-11-28

申请号：US18322212

申请日：2023-05-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： John L. LEMON ,  Hong YU ,  Haiting WANG ,  Hui ZHAN

IPC: H01L29/78 ,  H01L21/84 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a wraparound gate structure and methods of manufacture. The structure includes: a channel region comprising semiconductor material; an isolation structure surrounding the channel region; a divot within the isolation structure; and a gate structure comprising gate material within the divot and surrounding the channel region.