公开(公告)号：US11316019B2

公开(公告)日：2022-04-26

申请号：US16942734

申请日：2020-07-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Johnatan Avraham Kantarovsky ,  Rajendran Krishnasamy ,  Siva P. Adusumilli ,  Steven Bentley ,  Michael Joseph Zierak ,  Jeonghyun Hwang

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

Abstract: The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to semiconductor devices having field plates that are arranged symmetrically around a gate. The present disclosure provides a semiconductor device including an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region and laterally between the source and drain electrodes, a first field plate between the source electrode and the gate, a second field plate between the drain electrode and the gate, in which the gate is spaced apart laterally and substantially equidistant from the first field plate and the second field plate.

公开(公告)号：US11616127B2

公开(公告)日：2023-03-28

申请号：US17650854

申请日：2022-02-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Johnatan Avraham Kantarovsky ,  Rajendran Krishnasamy ,  Siva P. Adusumilli ,  Steven Bentley ,  Michael Joseph Zierak ,  Jeonghyun Hwang

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/417

Abstract: The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to semiconductor devices having field plates that are arranged symmetrically around a gate. The present disclosure provides a semiconductor device including an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region and laterally between the source and drain electrodes, a first field plate between the source electrode and the gate, a second field plate between the drain electrode and the gate, in which the gate is spaced apart laterally and substantially equidistant from the first field plate and the second field plate.