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1.发明申请公开(公告)号：US20220056616A1
公开(公告)日：2022-02-24
申请号：US17471641
申请日：2021-09-10
发明人： Soubir Basak , Igor Peidous , Carissima Marie Hudson , HyungMin Lee , ByungChun Kim , Robert J. Falster
摘要： A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.
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公开(公告)号：US20190311912A1
公开(公告)日：2019-10-10
申请号：US16438000
申请日：2019-06-11
IPC分类号： H01L21/322 , H01L21/683 , H01L21/67 , H01L21/302 , H01L21/687 , C30B25/12
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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公开(公告)号：US20190295853A1
公开(公告)日：2019-09-26
申请号：US16437996
申请日：2019-06-11
IPC分类号： H01L21/322 , H01L21/683 , H01L21/67 , H01L21/302 , H01L21/687 , C30B25/12
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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公开(公告)号：US11276582B2
公开(公告)日：2022-03-15
申请号：US16438000
申请日：2019-06-11
IPC分类号： C30B25/12 , H01L21/302 , H01L21/322 , H01L21/67 , H01L21/683 , H01L21/687
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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5.发明授权公开(公告)号：US11142844B2
公开(公告)日：2021-10-12
申请号：US16303195
申请日：2017-06-06
发明人： Soubir Basak , Igor Peidous , Carissima Marie Hudson , HyungMin Lee , ByungChun Kim , Robert J. Falster
摘要： A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.
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公开(公告)号：US20190333778A1
公开(公告)日：2019-10-31
申请号：US16437988
申请日：2019-06-11
IPC分类号： H01L21/322 , H01L21/683 , H01L21/67 , H01L21/302 , H01L21/687 , C30B25/12
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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公开(公告)号：US11276583B2
公开(公告)日：2022-03-15
申请号：US16438003
申请日：2019-06-11
IPC分类号： H01L21/322 , H01L21/683 , H01L21/67 , H01L21/302 , H01L21/687 , C30B25/12
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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8.发明申请公开(公告)号：US20210404088A1
公开(公告)日：2021-12-30
申请号：US17471453
申请日：2021-09-10
发明人： Soubir Basak , Igor Peidous , Carissima Marie Hudson , HyungMin Lee , ByungChun Kim , Robert J. Falster
摘要： A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.
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公开(公告)号：US20190311913A1
公开(公告)日：2019-10-10
申请号：US16438003
申请日：2019-06-11
IPC分类号： H01L21/322 , H01L21/683 , H01L21/67 , H01L21/302 , H01L21/687 , C30B25/12
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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公开(公告)号：US11282715B2
公开(公告)日：2022-03-22
申请号：US16437996
申请日：2019-06-11
IPC分类号： H01L21/32 , H01L21/683 , H01L21/67 , H01L21/302 , H01L21/687 , C30B25/12 , H01L21/322
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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