公开(公告)号：US20150028431A1

公开(公告)日：2015-01-29

申请号：US14513759

申请日：2014-10-14

Applicant: Globalfoundries Inc.

Inventor： Peter BAARS ,  Marco LEPPER ,  Uwe KAHLER ,  Vivien SCHROEDER

IPC: H01L21/285 ,  H01L29/49

CPC classification number: H01L21/2855 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/32134 ,  H01L29/4958 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/7843

Abstract: The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the Ni/Pt layer, wet stripping unreacted Ni, annealing the Ni stripped Ni/Pt layer, stripping unreacted Pt from the annealed Ni/Pt layer, e.g., with Aqua Regia, treating the Pt stripped Ni/Pt layer with an oxygen plasma, cleaning the Ni/Pt layer, and stripping unreacted Pt from the cleaned Ni/Pt layer, e.g., with a second application of Aqua Regia.

Abstract translation: 在形成含Pt的NiSi之后剩余的Pt残余物的量通过在形成浇口间隔件的同时进行O2闪光，然后清洗并应用Aqua Regia的第二次应用来减少。 实施例包括在半导体衬底上溅射沉积Ni / Pt层，退火Ni / Pt层，湿剥离未反应的Ni，退火Ni剥离的Ni / Pt层，从退火的Ni / Pt层剥离未反应的Pt，例如， Aqua Regia，用氧等离子体处理Pt剥离的Ni / Pt层，清洁Ni / Pt层，以及从清洁的Ni / Pt层剥离未反应的Pt，例如，通过第二次应用Aqua Regia。