公开(公告)号：US20240274421A1

公开(公告)日：2024-08-15

申请号：US18109388

申请日：2023-02-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuyuki EGAWA ,  Atsuhito FUKASAWA ,  Suenori KIMURA ,  Takayasu NAGASAWA ,  Shunsuke KOBAYASHI

IPC: H01J43/28 ,  H01J43/08

CPC classification number: H01J43/28 ,  H01J43/08

Abstract: An electron tube includes a photoelectric conversion unit, an electron detection unit configured to receive a photoelectrons from the photoelectric conversion unit, a gate electrode disposed between the photoelectric conversion unit and the electron detection unit, and a housing configured to accommodate the photoelectric conversion unit, the electron detection unit, and the gate electrode. The housing has a lid portion to which the photoelectric conversion unit is fixed and which constitutes one end side of the housing. The gate electrode includes a main body portion that control passage of the photoelectrons by applying a voltage, and a power supply part that supports the main body portion so as to be spaced apart from the photoelectric conversion unit and applies a voltage to the main body portion. The power supply part is held by the lid portion.

公开(公告)号：US20200149959A1

公开(公告)日：2020-05-14

申请号：US16628350

申请日：2018-06-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsuhito FUKASAWA ,  Yasuyuki EGAWA ,  Shigeru ICHIKAWA ,  Yasuharu NEGI

IPC: G01J1/44

Abstract: An electron tube includes a photoelectric surface, an avalanche photodiode, a focusing electrode part that accelerates and focuses the electrons E from the photoelectric surface toward the avalanche photodiode, and a casing including a stem provided with the avalanche photodiode. The stem is provided with a light incident hole through which the light is transmitted, and the periphery of the light incident hole is light-shielded by the stem. The focusing electrode part includes a first region provided with a light passage hole, and a second region provided with an electron passage hole that guides the electrons to the avalanche photodiode. The first region is formed on an axial line that connects the light incident hole and the photoelectric surface. The second region is formed on an axial line that connects the photoelectric surface and the avalanche photodiode.