公开(公告)号：US20170243924A1

公开(公告)日：2017-08-24

申请号：US15500084

申请日：2014-12-19

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Jianhua YANG ,  Stanley WILLIAMS ,  Max ZHANG ,  Zhiyong LI

IPC: H01L27/26 ,  H01L47/00

CPC classification number: H01L27/26 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L47/005

Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.