公开(公告)号：US20140220489A1

公开(公告)日：2014-08-07

申请号：US13792325

申请日：2013-03-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yutaka KOZUMA ,  Hiroaki OIZUMI ,  Naoki YASUI ,  Seiichi WATANABE

IPC: G03F7/004

CPC classification number: G03F7/405 ,  G03F7/40

Abstract: Long-period roughness in patterned resist is reduced in a manufacturing process of a sample such as a semiconductor device. A method for processing a sample to be processed, with patterned resist, in a sample processing apparatus includes: disposing the sample to be processed, with the patterned resist on the stage in the processing chamber; supplying silicon tetrachloride (SiCl4) or hydrobromide (HBr) into the processing chamber as processing gas; holding the pressure of the processing chamber in the range of 1 Pa to 10 KPa; exciting the processing gas by irradiating the vacuum ultraviolet light having a wavelength of 200 nm or less to the processing gas; reacting an element contained in the excited processing gas with the pattern resist of the sample, and curing the resist.

Abstract translation: 在诸如半导体器件的样品的制造过程中，图案化抗蚀剂中的长周期粗糙度降低。 一种用于在样品处理设备中处理具有图案化抗蚀剂的待处理样品的方法，包括：将经处理的样品与图案化的抗蚀剂一起设置在处理室中的台上; 将四氯化硅（SiCl 4）或氢溴酸盐（HBr）作为处理气体供应到处理室中; 将处理室的压力保持在1Pa至10KPa的范围内; 通过向处理气体照射波长为200nm以下的真空紫外线来激励处理气体; 将包含在激发的处理气体中的元素与样品的图案抗蚀剂反应，并使抗蚀剂固化。