公开(公告)号：US20190006153A1

公开(公告)日：2019-01-03

申请号：US15562353

申请日：2017-01-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Nanako TAMARI ,  Hitoshi TAMURA ,  Naoki YASUI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.

公开(公告)号：US20180277402A1

公开(公告)日：2018-09-27

申请号：US15719149

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masatoshi KAWAKAMI ,  Motohiro TANAKA ,  Yasushi SONODA ,  Kohei SATO ,  Naoki YASUI

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/334

Abstract: Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.

公开(公告)号：US20190088453A1

公开(公告)日：2019-03-21

申请号：US15902799

申请日：2018-02-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasushi SONODA ,  Naoki YASUI ,  Motohiro TANAKA ,  Koichi YAMAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil. A response time constant of the first power source is smaller than a response time constant of the second power source.

公开(公告)号：US20180082821A1

公开(公告)日：2018-03-22

申请号：US15445027

申请日：2017-02-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Norihiko IKEDA ,  Naoki YASUI

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32669 ,  H01J2237/3341

Abstract: A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a control unit. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The control unit controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.

公开(公告)号：US20180337022A1

公开(公告)日：2018-11-22

申请号：US16050089

申请日：2018-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu MORIMOTO ,  Naoki YASUI ,  Yasuo OHGOSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32192 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

公开(公告)号：US20180269118A1

公开(公告)日：2018-09-20

申请号：US15690660

申请日：2017-08-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako MATSUI ,  Kenichi KUWAHARA ,  Naoki YASUI ,  Masaru IZAWA ,  Tatehito USUI ,  Takeshi OHMORI

IPC: H01L21/66 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32 ,  G01B11/06

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.

公开(公告)号：US20190088452A1

公开(公告)日：2019-03-21

申请号：US15919682

申请日：2018-03-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazuya YAMADA ,  Koichi YAMAMOTO ,  Naoki YASUI ,  Norihiko IKEDA ,  Isao MORI

IPC: H01J37/32 ,  H01L21/67

Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

公开(公告)号：US20160254163A1

公开(公告)日：2016-09-01

申请号：US14846736

申请日：2015-09-05

Applicant: Hitachi High-Technologies Corporation

Inventor： Nanako TAMARI ,  Michikazu MORIMOTO ,  Naoki YASUI

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/30655 ,  H01J37/32146 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/32137 ,  H01L21/67253

Abstract: A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.

Abstract translation: 等离子体处理装置包括设置在真空室内的处理室中的样品台。 通过使用在处理室中形成的等离子体来处理安装在样品台顶表面上的晶片。 等离子体处理装置还包括设置在样品台的中心侧的部分和周边的一部分上的电极，并提供射频电力。 在分别提供给中心侧的电极和外周侧的电极的每个射频功率中，以预定的周期重复大幅度和小幅度。 控制装置将大幅度项的长度，大幅度项的长度和每个射频功率中的长度与周期的比率调整为不同的值。

公开(公告)号：US20150170886A1

公开(公告)日：2015-06-18

申请号：US14447712

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu MORIMOTO ,  Naoki YASUI ,  Shunsuke KANAZAWA ,  Yasuo OHGOSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32192 ,  H01L21/32137

Abstract: In a plasma processing apparatus having a plasma processing chamber for applying plasma processing to a sample, a first radio frequency power supply for supplying first radio frequency power for generation of a plasma, a sample stage for mounting the sample thereon, a second radio frequency power supply for supplying second radio frequency power to the sample stage, and a pulse-generating unit for sending to the first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to the second radio frequency power supply a second pulse for time modulation of the second radio frequency power, the pulse-generating unit includes a phase control waveform generation unit for generating a phase modulation-use waveform for modulating the phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of the second pulse.

Abstract translation: 在具有用于向样品施加等离子体处理的等离子体处理室的等离子体处理装置中，提供用于产生等离子体的第一射频功率的第一射频电源，用于安装样品的样品台，第二射频功率 用于向样本台提供第二射频功率的电源;以及脉冲发生单元，用于向第一射频电源发送用于第一射频功率的时间调制的第一脉冲，以及用于向第二射频电源发送 第二脉冲用于第二射频功率的时间调制，脉冲发生单元包括相位控制波形生成单元，用于产生用于调制第二脉冲的导通周期的相位的相位调制用波形， 使用波形第二脉冲的ON周期的相位。

公开(公告)号：US20200286715A1

公开(公告)日：2020-09-10

申请号：US16640443

申请日：2019-03-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Norihiko IKEDA ,  Naoki YASUI ,  Kazuya YAMADA

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.