公开(公告)号：US20230301215A1

公开(公告)日：2023-09-21

申请号：US17785916

申请日：2021-08-30

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Yi LI ,  Yuhui HE ,  Yaoyao FU ,  Xiaodi HUANG ,  Xiangshui MIAO

IPC: H10N70/00 ,  H10N70/20 ,  H10B63/00

CPC classification number: H10N70/826 ,  H10B63/22 ,  H10B63/84 ,  H10N70/026 ,  H10N70/245

Abstract: The present invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method includes: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer by using a magnetron sputtering manner to deposit the upper electrode, controlling upper electrode metal particles to have suitable kinetic energy by controlling sputtering power, controlling a vacuum degree of a region where the upper electrode and the resistive material layer are located, such that a redox reaction occurs spontaneously between the upper electrode and the resistive material layer during the deposition of the upper electrode to form a built-in bipolar gating layer; and continuously depositing the upper electrode on the built-in bipolar gating layer .