公开(公告)号：US20210090646A1

公开(公告)日：2021-03-25

申请号：US16971678

申请日：2019-07-02

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui MIAO ,  Yi LI ,  Xiaodi HUANG

IPC: G11C13/00 ,  G11C7/10 ,  G06F7/523

Abstract: The invention discloses a multiplier and an operation method based on 1T1R memory. The multiplier includes: a 1T1R crossbar A1, a 1T1R crossbar A2, a 1T1R crossbar A3, and a peripheral circuit. The 1T1R matrices are configured to realize operation and store result of it, and the peripheral circuit is configured to transfer data and control signals, thereby controlling the operation and storage process of the 1T1R matrices. An operation circuit is configured to respectively achieve NOR Boolean logic operations, two-bit binary multipliers, and optimization. The operation method corresponding to the operation circuit respectively completes the corresponding calculation and storage process by controlling an initialization resistance state of 1T1R devices, the size of a word line input signal, the size of a bit line input signal, and the size of a source line input signal.

公开(公告)号：US20230301215A1

公开(公告)日：2023-09-21

申请号：US17785916

申请日：2021-08-30

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Yi LI ,  Yuhui HE ,  Yaoyao FU ,  Xiaodi HUANG ,  Xiangshui MIAO

IPC: H10N70/00 ,  H10N70/20 ,  H10B63/00

CPC classification number: H10N70/826 ,  H10B63/22 ,  H10B63/84 ,  H10N70/026 ,  H10N70/245

Abstract: The present invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method includes: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer by using a magnetron sputtering manner to deposit the upper electrode, controlling upper electrode metal particles to have suitable kinetic energy by controlling sputtering power, controlling a vacuum degree of a region where the upper electrode and the resistive material layer are located, such that a redox reaction occurs spontaneously between the upper electrode and the resistive material layer during the deposition of the upper electrode to form a built-in bipolar gating layer; and continuously depositing the upper electrode on the built-in bipolar gating layer .